Method for preparing dynamic random access memory structure

ABSTRACT

A method for preparing a dynamic random access memory structure, comprising steps of forming a bottom conductive region in a substrate, removing a predetermined portion of the substrate to form a plurality of pillars having a bottom end lower than a bottom surface of the bottom conductive region, forming a first oxide layer on the substrate and below the bottom conductive region in the pillar, forming a conductive block between two adjacent pillars to electrically connect the two bottom conductive regions in the two adjacent pillars, forming a second oxide layer covering the conductive block, forming a gate oxide layer on a sidewall of the pillar, forming a gate structure on a surface of the gate oxide layer; and forming an upper conductive region on a top portion of the pillar.

This application is a continuation application of and claims priority toapplication Ser. No. 11/402,871, filed Apr. 13, 2006.

BACKGROUND OF THE INVENTION

(A) Field of the Invention

The present invention relates to a dynamic random access memory (DRAM)structure and method for preparing the same, and more particularly, to adynamic random access memory structure having vertical floating bodymemory cells and method for preparing the same.

(B) Description of the Related Art

A memory cell of the DRAM generally consists of a metal oxidesemiconductor field effect transistor and a capacitor on a siliconsubstrate, and the transistor includes a source electrode electricallyconnected to an upper storage plate of the capacitor. There are twotypes of capacitors: stack capacitors and deep trench capacitors. Thestack capacitor is fabricated on the surface of the silicon substrate,while the deep trench capacitor is fabricated inside the siliconsubstrate. Recently, the integrity of the DRAM has increased with theinnovation of semiconductor fabrication technology rapidly. However, thesize of the memory cell must be shrunk to achieve the purpose of highintegrity, i.e., increasing the integrity needs to reduce the size ofthe transistor and the capacitor.

In 2002, Takahsi Ohasawa et al. discloses a new dynamic random accessmemory cell called floating body cell (FBC) (see: “Memory Design UsingOne-Transistor Gain Cell on SOI”, ISSCC Digest of Technical Paper,PP152-153). The floating body cell consists of a metal oxidesemiconductor field effect transistor having a floating body on anexpensive substrate of silicon on insulator (SOI), and the floating bodyserves to store carriers. Compared to the conventionalone-transistor/one-capacitor memory cell using the capacitor to storingcharges, the floating body cell stores the charges in the floating bodywithout using an additional capacitor. Hence, the floating body cell hasa simpler memory structure, smaller occupying area per memory cell andhigher integrity than the conventional one-transistor/one-capacitormemory cell.

Further, the conventional one-transistor/one-capacitor memory cellchecks whether the stored data is “1” or “0” by comparing a read outvoltage from the memory cell with a reference voltage. Comparatively,the floating body cell checks whether the stored data is “1” or “0”based on the magnitude of a read out current. However, the floating bodycell stores the carriers around an interface between two differentmaterials, and defects in the interface is likely to recombine with thecarriers, which influences the retention time of the carriers in thefloating body.

SUMMARY OF THE INVENTION

The primary objective of the present invention is to provide a dynamicrandom access memory structure having vertical floating body memorycells and method for preparing the same, which stores the carriers inthe center of a vertically disposed floating body rather than in aninterface between different material so as to have a longer retentiontime to the prevention of the recombination of the carrier with defectsin the interface.

In order to achieve the above-mentioned objective and avoid the problemsof the prior art, one embodiment of the present invention discloses adynamic random access memory structure having vertical floating bodymemory cells. The dynamic random access memory structure comprises asubstrate having a plurality of cylindrical pillars, a gate oxide layerpositioned on a sidewall of each of the cylindrical pillars, and a gatestructure positioned on a surface of the gate oxide layer. Each pillarcomprises an upper conductive region positioned on a top portion of thepillar, a body positioned below the upper conductive region in thepillar and a bottom conductive region positioned below the body in thepillar. The upper conductive region serves as a drain electrode, thebottom conductive region serves as a source electrode and the body iscapable of storing carriers. Preferably, the dynamic random accessmemory structure further comprises a conductive layer positioned on thesubstrate, and the bottom conductive region in the pillar contacts theconductive layer.

According to another embodiment of the present invention, the dynamicrandom access memory structure further comprises an oxide layerpositioned on the substrate and in a bottom portion of the pillar,wherein the bottom conductive region is positioned above the oxide layerin the pillar. In addition, the dynamic random access memory structurefurther comprises a conductive block positioned between two adjacentpillars to electrically connect the two bottom conductive regions in thetwo adjacent pillars.

According to one embodiment of the present invention, a method forpreparing a dynamic random access memory structure comprises steps offorming a bottom conductive region in a substrate, removing apredetermined portion of the substrate to form a plurality of pillarshaving a bottom end lower than a bottom surface of the bottom conductiveregion, forming a first oxide layer on the substrate and below thebottom conductive region in the pillar, forming a conductive blockbetween two adjacent pillars to electrically connect the two bottomconductive regions in the two adjacent pillars, forming a second oxidelayer covering the conductive block, forming a gate oxide layer on asidewall of the pillar, forming a gate structure on the surface of thegate oxide layer and forming an upper conductive region on a top portionof the pillar.

The conventional floating body cell is horizontally positioned andprepared on an expensive SOI substrate. Inversely, the dynamic randomaccess memory structure of the present invention possesses one advantageof occupying a smaller area for increasing integrity since the floatingbody memory cell is vertically positioned. Further, the stored carriersstay in most cases at the center of the cylindrical body, which is notlikely to recombine with the defects in the interface such as thesurface of the pillar; hence, the carriers will have a longer retentiontime according to the present invention. In addition, the preparation ofthe vertical floating body memory cell can use the silicon substrate andthe LOCOS process to form silicon on insulator structure rather thanusing the expensive SOI substrate as the prior art does; therefore, thepresent invention can dramatically decrease the fabrication cost.

BRIEF DESCRIPTION OF THE DRAWINGS

The objectives and advantages of the present invention will becomeapparent upon reading the following description and upon reference tothe accompanying drawings in which:

FIG. 1 to FIG. 6 illustrate a method for preparing a dynamic randomaccess memory structure according to one embodiment of the presentinvention;

FIG. 7 and FIG. 8 illustrate a method for preparing a dynamic randomaccess memory structure according to another embodiment of the presentinvention;

FIG. 9 to FIG. 14 illustrate a method for preparing a dynamic randomaccess memory structure according to another embodiment of the presentinvention; and

FIG. 15 to FIG. 18 illustrate a method for preparing a dynamic randomaccess memory structure according to another embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 1 to FIG. 6 illustrate a method for preparing a dynamic randomaccess memory structure 10 according to one embodiment of the presentinvention. First, an implanting process is performed to implant ionsinto a predetermined depth in a semiconductor substrate 12 such as asilicon substrate to form a conductive layer 14 in the semiconductorsubstrate 12. Subsequently, a mask layer 16 is formed on thesemiconductor substrate 12 and an etching process is then performed toremove a portion of the semiconductor substrate 12 not covered by themask layer 16 down to the interior of the conductive layer 14 in thesemiconductor substrate 12 to form a plurality of cylindrical pillars18. Particularly, the conductive layer 14 can be regarded as twoportions, i.e., a bottom conductive region 38 at the bottom portion ofthe cylindrical pillar 18 and a conductive layer 14′ on the surface ofthe semiconductor substrate 12, as shown in FIG. 2.

Referring to FIG. 3, a deposition process and a recessing process areperformed to form an oxide layer 20 on the exposed semiconductorsubstrate 12 and thermal oxidation process is performed to form a gateoxide layer 22 on the sidewall of the cylindrical pillar 18.Subsequently, a deposition process is performed to form a dopedpolysilicon layer 24 covering the cylindrical pillar 18 and the surfaceof the semiconductor substrate 12, as shown in FIG. 4.

Referring to FIG. 5, an anisotropic etching process is performed toremove a portion of the doped polysilicon layer 24 to form a gatestructure 24′ having a spacer profile. Particularly, the gate oxidelayer 22 surrounds the sidewall of the cylindrical pillar 18 and thegate structure 24′ surrounds the gate oxide layer 22. Subsequently, animplanting process is performed to implant ions into a top portion ofthe cylindrical pillar 18 to form an upper conductive region 30.Particularly, the upper conductive region 30 serves as a drainelectrode, the bottom conductive region 38 serves as a source electrode,and the cylindrical body 18 between the upper conductive region 30 andthe bottom conductive region 38 serves as a body 36 for storing thecarriers.

Referring to FIG. 6, a deposition process and an etching back processare performed to form a first dielectric layer 26 on the semiconductorsubstrate 12. The lithographic process, the etching process and thedeposition process are used to form a conductive block 28 between twoadjacent cylindrical pillars 18 to electrically connect the two gatestructure 24′ on the sidewalls of the two adjacent cylindrical pillars18 so as to form a word line. Subsequently, a second dielectric layer 42is formed to cover the conductive block 28, and the lithographicprocess, the etching process and the deposition process are then used toform a bit line 32, which electrically connects the upper conductiveregion 30 serving as the drain electrode on the top portion of thecylindrical pillar 18. Particularly, the bottom conductive region 38,the body 36, the upper conductive region 30, the gate oxide layer 22 andthe gate structure 24′ form a vertical floating body memory cell 40. Thebit line 32 can be optionally positioned in parallel or in perpendicularto the word line since they are in different levels.

FIG. 7 and FIG. 8 illustrate a method for preparing a dynamic randomaccess memory structure 50 according to another embodiment of thepresent invention. Compared to the dynamic random access memorystructure 10 using the conductive block 28 to electrically connect twogate structures 24′ in two adjacent cylindrical pillars 18 to form aword line as shown in FIG. 6, the dynamic random access memory structure50 in FIG. 7 uses a contact plug 52 to electrically connect the gatestructure 24′ on the sidewall of the cylindrical pillar 18 to a wordline 34 above the bit line 32. The contact plug 52 can be prepared bydepositing a thicker first dielectric layer 26′, etching the firstdielectric layer 26′ to form a contact hole, and depositing plug metalin the contact hole, wherein the thicker first dielectric layer 26′ isdeposited both after the formation of the gate structure 24′ and afterthe formation of the bit line 32. The bit line 32 of the dynamic randomaccess memory structure 50 cannot be positioned in parallel to the wordline 34, but in perpendicular to the word line 34, as shown in FIG. 7.

According to one embodiment of the present invention, the dynamic randomaccess memory array 90 comprises a plurality of floating body memorycells 40, a plurality of bit lines 32 and a plurality of word lines 34,wherein these floating body memory cells 40 are positioned on thesemiconductor substrate 12 in a plurality of columns and rows manner.Each bit line 32 connects the upper conductive regions 30 of thefloating body memory cells 40 in the same row and each word line 34connects the gate structures 24′ of the floating body memory cells 40 inthe same column. Further, the bottom conductive regions 38 of thefloating body memory cells 40 in a predetermined area are connected toeach other via the conductive layer 14′ to form a common source.

FIG. 9 to FIG. 14 illustrate a method for preparing a dynamic randomaccess memory structure 60 according to another embodiment of thepresent invention. An implanting process is performed to implant ionsinto a semiconductor substrate 12 to form a conductive layer 14 in thesemiconductor substrate 12, and a mask layer 16 is then formed on thesemiconductor substrate 12. Subsequently, an etching process isperformed to remove a portion of the semiconductor substrate 12 notcovered by the mask layer to form a plurality of cylindrical pillars 18having a bottom end lower than a bottom surface of the conductive layer14, wherein the remained conductive layer 14 in the cylindrical pillar18 can be regarded as a bottom conductive region 62, as shown in FIG.10.

Referring to FIG. 11, an oxide layer 64 is formed on the semiconductorsubstrate 12, and an etching process is then performed to remove theoxide layer 64 above a predetermined depth to expose a portion of thecylindrical pillar 18. Subsequently, a deposition process is performedto form a dielectric layer 66 made of silicon nitride on thesemiconductor substrate 12 and covering the exposed portion of thecylindrical pillar 18. An etching process is then performed to remove aportion of the dielectric layer 66 from the surface of the semiconductorsubstrate 12 to form a collar dielectric layer 66′ encapsulating aportion of the sidewall of the cylindrical pillar 18, as shown in FIG.12.

Referring to FIG. 13, the oxide layer 64 is removed from the surface ofthe semiconductor substrate 12 and a thermal oxidation process is thenperformed to form an oxide layer 68 on the surface of the semiconductorsubstrate 12 and on a portion of the sidewall of the cylindrical pillar18 not encapsulated by the collar dielectric layer 66′, i.e., performinga local oxidation of silicon (LOCOS) process. Subsequently, the collardielectric layer 66′ is removed from the sidewall of the cylindricalpillar 18 and a conductive block 70 is formed between the cylindricalpillars 18 by deposition and etching processes, wherein the conductiveblock 70 has a top end higher the oxide layer 68 in the cylindricalpillar 18 for electrically connecting the bottom conductive regions 62in two adjacent cylindrical pillars 18. The processes shown in FIG. 3 toFIG. 6 are then performed to complete the dynamic random access memorystructure 60, as shown in FIG. 14. Particularly, the gate oxide layer22, the gate structure 24′, the upper conductive region 30, the body 36and the bottom conductive region 62 form a vertical floating body memorycell 74.

FIG. 15 to FIG. 18 illustrate a method for preparing a dynamic randomaccess memory structure 80 according to another embodiment of thepresent invention. A mask layer 16 is formed on a semiconductorsubstrate 12, and an etching process is then performed to remove aportion of the semiconductor substrate 12 not covered by the mask layer16 down to predetermined depth to form a plurality of cylindricalpillars 18. Subsequently, the processes shown in FIG. 11 and FIG. 12 areperformed to form a collar dielectric layer 66′ encapsulating apredetermined portion of the sidewall of the cylindrical pillar 18, asshown in FIG. 16.

Referring to FIG. 17, a thermal oxidation process is performed to forman oxide layer 68 on the surface of the semiconductor substrate 12 andin a portion of the cylindrical pillar 18 whose sidewall is notencapsulated by the collar dielectric layer 66′. Subsequently, thecollar dielectric layer 66′ is removed from the sidewall of thecylindrical pillars 18, and a conductive block 70 is formed between thecylindrical pillars 18 by deposition and etching processes.Particularly, the conductive block 70 has a top end higher than that ofthe oxide layer 68 in the pillar 18, and is preferably made of dopedpolysilicon.

Referring to FIG. 18, a thermal treating process is performed to diffusethe ions from the conductive block 70 made of doped polysilicon into thecylindrical pillar 18 to form a bottom conductive region 82 above theoxide layer 68 in the pillar 18. Subsequently, the processes in FIG. 3to FIG. 6 are performed to complete the dynamic random access memorystructure 80. Particularly, the gate oxide layer 22, the gate structure24′, the upper conductive region 30, the body 36 and the bottomconductive region 82 form a vertical floating body memory cell 84.

To write data “1” into the vertical floating body memory cell 40 (thesame to the other vertical floating body memory cell shown in otherembodiment), the bottom conductive region 38 serving as the sourceelectrode is grounded and a positive voltage is applied to the upperconductive region 30 serving as the drain electrode and the gatestructure 24′ so that the vertical floating body memory cell 40 operatesin the saturation region and holes are injected into the body 36 towrite data “1”. To write data “0” into the vertical floating body memorycell 40, the bottom conductive region 38 is grounded, a positive voltageis applied to the gate structure 24′ and a negative voltage is appliedto the upper conductive region 30 so that the PN junction is forwardbiased and holes are ejected to the upper conductive region 30 to writedata “0”.

To read data stored in the vertical floating body memory cell 40, thebottom conductive region 38 is grounded and a positive voltage smallerthan that is writing process is applied to the upper conductive region30 and the gate structure 24′ so that the vertical floating body memorycell 40 operates in the linear region and the magnitude of the draincurrent depends on the number of the holes in the body 36. Consequently,whether the data stored in the vertical floating body memory cell 40 is“1” or “0” can be decided based on the magnitude of the read out draincurrent. Particularly, a positive voltage is applied to the gatestructure 24′ surrounding the cylindrical body 36 that stores thecarriers (holes) during the writing and reading process; hence, thecarriers in most cases stay at the center of the cylindrical body 36,which is not likely to recombine with the defects at the interface. As aresult, the carriers will have a longer retention time.

In addition, the preparation of the vertical floating body memory cell40 can use the silicon substrate 12 and the LOCOS process to formsilicon on insulator structure rather than using the expensive SOIsubstrate as the prior art does; therefore, the present invention candramatically decrease the fabrication cost. Further, the width of thetransistor in the vertical floating body memory cell 40 can be increasedby increasing the height of the cylindrical pillar 18 rather than byincreasing the occupied silicon area, which is very suitable to beapplied in the advance high integrity design.

The above-described embodiments of the present invention are intended tobe illustrative only. Numerous alternative embodiments may be devised bythose skilled in the art without departing from the scope of thefollowing claims.

1. A method for preparing a dynamic random access memory structure,comprising steps of: forming a bottom conductive region in a substrate;removing a predetermined portion of the substrate to form a plurality ofpillars having a bottom end lower than a bottom surface of the bottomconductive region; forming a first oxide layer on the substrate andbelow the bottom conductive region in the pillar; forming a conductiveblock between two adjacent pillars to electrically connect the twobottom conductive regions in the two adjacent pillars; forming a secondoxide layer covering the conductive block; forming a gate oxide layer ona sidewall of the pillar; forming a gate structure on a surface of thegate oxide layer; and forming an upper conductive region on a topportion of the pillar.
 2. The method for preparing a dynamic randomaccess memory structure of claim 1, wherein the step of forming a bottomconductive region in a substrate is implanting ions into the substrate.3. The method for preparing a dynamic random access memory structure ofclaim 1, wherein the step of removing a predetermined portion of thesubstrate to form a plurality of pillars comprises: forming a mask layeron the substrate; and performing an etching process to remove thesubstrate not covered by the mask layer until the bottom end of thepillar is lower than the bottom surface of the bottom conductive region.4. The method for preparing a dynamic random access memory structure ofclaim 1, wherein the step of forming a first oxide layer on thesubstrate and below the bottom conductive region in the pillarcomprises: forming a collar dielectric layer encapsulating apredetermined portion of the pillar; performing a thermal oxidationprocess to form the first oxide layer on the substrate and in the pillarnot covered by the collar dielectric layer; and removing the collardielectric layer.
 5. The method for preparing a dynamic random accessmemory structure of claim 4, wherein the collar dielectric layerencapsulates a portion of the sidewall of the pillar above the bottomsurface of the bottom conductive region.
 6. The method for preparing adynamic random access memory structure of claim 1, wherein the step offorming a gate structure on the surface of the gate oxide layercomprises: forming a polysilicon layer on the substrate; and performingan anisotropic etching process to form the gate structure having aspacer profile.
 7. The method for preparing a dynamic random accessmemory structure of claim 1, further comprising a step of forming aconductive block between two adjacent pillars to electrically connectthe two gate structures in the two adjacent pillars.
 8. The method forpreparing a dynamic random access memory structure of claim 1, whereinthe step of forming an upper conductive region on a top portion of thepillar is implanting ions into the top portion of the pillar.
 9. Amethod for preparing a dynamic random access memory structure,comprising steps of: preparing a substrate having a plurality ofpillars; forming a first oxide layer on the substrate and in the pillar;forming a conductive block between the two pillars, the conductive blockhaving a top end higher than the first oxide layer in the pillar;forming at least one bottom conductive region on the first oxide layerin the pillar; forming a second oxide layer covering the conductiveblock; forming a gate oxide layer on a sidewall of the pillar; forming agate structure on a surface of the gate oxide layer; and forming anupper conductive region on a top portion of the pillar.
 10. The methodfor preparing a dynamic random access memory structure of claim 9,wherein the step of forming a first oxide layer on the substrate and inthe pillar comprises: forming a collar dielectric layer encapsulating apredetermined portion of the pillar; performing a thermal oxidationprocess to form the first oxide layer on the substrate and in the pillarnot covered by the collar dielectric layer; and removing the collardielectric layer.
 11. The method for preparing a dynamic random accessmemory structure of claim 9, wherein the conductive block is made ofpolysilicon, and the step of forming at least one bottom conductiveregion on the first oxide layer in the pillar is performing a thermaltreating process to diffuse ions from the conductive block into thepillar to form the bottom conductive region.
 12. The method forpreparing a dynamic random access memory structure of claim 9, whereinthe step of forming a gate structure on a surface of the gate oxidelayer comprises: forming a polysilicon layer on the substrate; andperforming an anisotropic etching process to form the gate structurehaving a spacer profile.
 13. The method for preparing a dynamic randomaccess memory structure of claim 9, further comprising a step of forminga conductive block between two adjacent pillars to electrically connectthe two gate structures in the two adjacent pillars.
 14. The method forpreparing a dynamic random access memory structure of claim 9, whereinthe step of forming an upper conductive region on a top portion of thepillar is implanting ions into the top portion of the pillar.